The first experimental report of quantum well intermixing in InGaN/GaN quantum wells. Soft potential profile InGaN/GaN QWs by metal/dielectric induced intermixing. Unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process.

We investigate on novel structures to trap, confine, and manipulate the propagation of light, taking from transformation optics and the inverse scattering problem.​​