Semiconductor Today features "Semi-polar III-nitride integration for visible light communication”
"Researchers based in Saudi Arabia and USA have used semi-polar indium gallium nitride (InGaN) quantum wells (QWs) to create a laser diode (LD) integrated with a semiconductor optical amplifier (SOA) for visible light communication (VLC), smart lighting, and underwater wireless optical communications (UWOC)."
"The team from Saudi Arabia’s King Abdullah University of Science and Technology (KAUST), University of California Santa Barbara (UCSB) in the USA, and King Abdulaziz City for Science and Technology (KACST) in Saudi Arabia, comments: “Since the on-chip integration of various photonic devices offers the advantages of small footprint, low cost and multi-functionality, it is of great interest to develop III-nitride photonic integrated circuits (PICs) at the visible wavelength.”"
Read more in Semiconductor Today
Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications
Chao Shen, Tien Khee Ng, Changmin Lee, Shuji Nakamura, James S. Speck, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi
Optics Express, 26(6), A219-A226 (2018)
http://www.semiconductor-today.com/news_items/2018/mar/kaust_190318.shtml
